Monolithic integration of 940 nm AlGaAs distributed Bragg reflectors on bulk Ge substrates
نویسندگان
چکیده
High quality 940 nm Al x Ga 1-x As n-type distributed Bragg reflectors (DBRs) were successfully monolithically grown on off-cut Ge (100) substrates. The Ge-DBRs have reflectivity spectra comparable to those conventional bulk GaAs substrates and smooth morphology reasonable periodicity. These results strongly support VCSEL growth fabrication more scalable for larger scale production of AlGaAs-based VCSELs.
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ژورنال
عنوان ژورنال: Optical Materials Express
سال: 2022
ISSN: ['2159-3930']
DOI: https://doi.org/10.1364/ome.452161